Shenzhen Huatianwei Electronics Co., Ltd.

MBR3100L

主要参数 MAIN CHARACTERISTICS 
IF(AV) 3A 
VRRM 100 V 
Tj 150℃ 
VF(max) 0.57V （@Tj=125℃）

产品特性

* 轴向、贴片结构

* 低功耗，高效率

* 良好的高温特性

* 过压保护环，高可靠性

* 环保（RoHS）产品

用途

* 低压、高频整流

* 低压续流电路和保护电路

PRODUCT: PLANAR VDMOS; SGT MOSFET; Trench MOSFET; SJ MOSFET; IGBT; SCHOTTKY DIODE; FRDFRD; RECTIFIER BRIDGE

CASES: IGBT case; MOSTET case; CHARGING PILE; UAV; AUTOMOTIVE ELECTRONICS; ROBOT; computer system; Industrial Internet

CONTACT: HOTLINE：0755-82047720; R & D：Building 6, denang Industrial Park, high tech Industrial Park, provincial road S307, Xiangtun Town, Dexing City, Jiangxi Province
Shenzhen office：Unit 1304, Building A, Lechuanghui Building, No. 1211 Guangguan Road, Guihua Community, Guanlan Street, Longhua, Shenzhen

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