Shenzhen Huatianwei Electronics Co., Ltd.

MBR10L200

主要参数 MAIN CHARACTERISTICS 
IF(AV) 10（2×5）A 
VF(max) 0.67V （@Tj=125℃）
Tj 150℃ 
VRRM 200 V

产品特性

 共阴结构

 低功耗，高效率

 良好的高温特性

 有过压保护环，高可靠性

 环保（RoHS）产品

PRODUCT: PLANAR VDMOS; SGT MOSFET; Trench MOSFET; SJ MOSFET; IGBT; SCHOTTKY DIODE; FRDFRD; RECTIFIER BRIDGE

CASES: IGBT case; MOSTET case; CHARGING PILE; UAV; AUTOMOTIVE ELECTRONICS; ROBOT; computer system; Industrial Internet

CONTACT: HOTLINE：0755-82047720; R & D：Building 6, denang Industrial Park, high tech Industrial Park, provincial road S307, Xiangtun Town, Dexing City, Jiangxi Province
Shenzhen office：Unit 1304, Building A, Lechuanghui Building, No. 1211 Guangguan Road, Guihua Community, Guanlan Street, Longhua, Shenzhen

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