Shenzhen Huatianwei Electronics Co., Ltd.

HCS2N65

主要参数 MAIN CHARACTERISTICS 
ID 2.0 A 
VDSS 650 V
Rdson （Vgs=10V） Max 5.5Ω
Qg-typ 8.4nC

产品特性

* 低栅极电荷

* 低 Crss (典型值 3.1pF)

* 开关速度快

* 产品全部经过雪崩测试

* 高抗 dv/dt 能力

* RoHS 产品

用途

* 高频开关电源

* 电子镇流器

* LED 电源

PRODUCT: PLANAR VDMOS; SGT MOSFET; Trench MOSFET; SJ MOSFET; IGBT; SCHOTTKY DIODE; FRDFRD; RECTIFIER BRIDGE

CASES: IGBT case; MOSTET case; CHARGING PILE; UAV; AUTOMOTIVE ELECTRONICS; ROBOT; computer system; Industrial Internet

CONTACT: HOTLINE：0755-82047720; R & D：Building 6, denang Industrial Park, high tech Industrial Park, provincial road S307, Xiangtun Town, Dexing City, Jiangxi Province
Shenzhen office：Unit 1304, Building A, Lechuanghui Building, No. 1211 Guangguan Road, Guihua Community, Guanlan Street, Longhua, Shenzhen

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