Shenzhen Huatianwei Electronics Co., Ltd.

RABS22-RABS210

· Glass passivated die construction 
· Low forward voltage drop 
· High current capability 
· High surge current capability

产品特点：

· Glass passivated die construction

· Low forward voltage drop

· High current capability

· High surge current capability

· Designed for surface mount application

· Plastic material-UL flammability 94V-0

PRODUCT: PLANAR VDMOS; SGT MOSFET; Trench MOSFET; SJ MOSFET; IGBT; SCHOTTKY DIODE; FRDFRD; RECTIFIER BRIDGE

CASES: IGBT case; MOSTET case; CHARGING PILE; UAV; AUTOMOTIVE ELECTRONICS; ROBOT; computer system; Industrial Internet

CONTACT: HOTLINE：0755-82047720; R & D：Building 6, denang Industrial Park, high tech Industrial Park, provincial road S307, Xiangtun Town, Dexing City, Jiangxi Province
Shenzhen office：Unit 1304, Building A, Lechuanghui Building, No. 1211 Guangguan Road, Guihua Community, Guanlan Street, Longhua, Shenzhen

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